ETCHING CHARACTERISTICS OF SILICATE GLASS-FILMS IN CF4 PLASMA

被引：12

作者：

JINNO, K ^{[1
]}

KINOSHITA, H ^{[1
]}

MATSUMOTO, Y ^{[1
]}

机构：

[1] TOSHIBA RES & DEV CTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

关键词：

D O I：

10.1149/1.2133541

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1258 / 1262

页数：5

共 12 条

[1] ABE H, 1974, 6TH P C SOL STAT DEV
[2] BROCHU M, 1976, ETCHING, P111
[3] BUTURI O, 1975, J JPN SOC APPL S287, V44
[4] CLARK HA, 1976, SOLID STATE TECHNOL, V19, P51
[5] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING
HEINECKE, RAH
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147
[6] NEW CHEMICAL DRY ETCHING
HORIIKE, Y
SHIBAGAKI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 13 - 18
[7] JACOB A, 1976, SOLID STATE TECHNOL, V70, P1919
[8] JINNO K, 1976, DENKI KAGAKU, V44, P204
[9] REINBERG AR, 1976, ETCHING
[10] ETCH RATES OF DOPED OXIDES IN SOLUTIONS OF BUFFERED HF
TENNEY, AS
GHEZZO, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : 1091 - 1095