ETCH RATES OF DOPED OXIDES IN SOLUTIONS OF BUFFERED HF

被引：49

作者：

TENNEY, AS ^{[1
]}

GHEZZO, M ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 08期

关键词：

D O I：

10.1149/1.2403636

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1091 / 1095

页数：5

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