InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm

被引:32
作者
Boehm, G
Ortsiefer, M
Shau, R
Rosskopf, J
Lauer, C
Maute, M
Köhler, F
Mederer, F
Meyer, R
Amann, MC
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] VertiLas GMBH, D-80939 Munich, Germany
[3] Univ Ulm, Optoelect Dept, D-89081 Ulm, Germany
关键词
molecular beam epitaxy; arsenides; semiconducting quaternary alloys; laser diodes;
D O I
10.1016/S0022-0248(02)02193-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) are demonstrated as light sources in the wavelength range from 1.3 to 2.0 mum. Continuous-wave operation at room temperature could be achieved for the whole wavelength range. This emphasizes not only the sophisticated device design but also the excellent suitability of the material system AlGaInAs/InP. Advantages and restrictions are discussed in this paper. Transmission experiments with single-mode VCSELs at 1.55 mum show error-free data transmission at modulation frequencies up to 10 Gbit/s. At 1.68 and 1.80 mum, gas sensing experiments detecting methane and water, respectively, could be successfully performed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:748 / 753
页数:6
相关论文
共 5 条
[1]   AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers [J].
Boehm, G ;
Ortsiefer, M ;
Shau, R ;
Koehler, F ;
Meyer, R ;
Amann, MC .
JOURNAL OF CRYSTAL GROWTH, 2001, 227 :319-323
[2]   CRITICAL THICKNESSES OF HIGHLY STRAINED INGAAS LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY [J].
GENDRY, M ;
DROUOT, V ;
SANTINELLI, C ;
HOLLINGER, G .
APPLIED PHYSICS LETTERS, 1992, 60 (18) :2249-2251
[3]   Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE [J].
Kuang, GK ;
Böhm, G ;
Grau, M ;
Rösel, G ;
Amann, MC .
JOURNAL OF CRYSTAL GROWTH, 2001, 227 :334-337
[4]  
ORTSIEFER M, 2002, 28 EUR C OPT COMM EC
[5]   A review of recent advances in semiconductor laser based gas monitors [J].
Werle, P .
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 1998, 54 (02) :197-236