Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE

被引：3

作者：

Kuang, GK ^{[1
]}

Böhm, G ^{[1
]}

Grau, M ^{[1
]}

Rösel, G ^{[1
]}

Amann, MC ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

molecular beam epitaxy; semiconducting III-V materials; laser diodes;

D O I：

10.1016/S0022-0248(01)00716-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength up to 2.2 mum in solid-source molecular-beam epitaxy. A continuous-wale threshold current density of 370 A/cm(2) at room temperature has been achieved for 2.2 mum lasers. Continuous-wave operation at temperature as high as 100 degreesC has been demonstrated and a characteristic temperature of 72 K has been achieved for 1.79 mum lasers. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：334 / 337

页数：4

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