INGAAS-INGAASP BURIED HETEROSTRUCTURE LASERS OPERATING AT 2.0-MU-M

被引：31

作者：

OCHIAI, M

TEMKIN, H

FOROUHAR, S

LOGAN, RA

机构：

[1] JET PROP LAB,PASADENA,CA 91109

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 08期

关键词：

D O I：

10.1109/68.403985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Buried heterostructure lasers with highly strained InGaAs-InGaAsP active regions, emitting at 2 mu m have been fabricated and tested, The lasers exhibited threshold current densities of 500 A/cm(2) for 1-mm-long cavities, an internal loss of 11 cm(-1), and characteristic temperatures as high as 50 degrees C, The gain characteristics were also investigated and a linewidth enhancement factor of 8 was determined.

引用

收藏

页码：825 / 827

页数：3

相关论文

共 9 条

[1] HIGH-TEMPERATURE OPERATION OF GAINASSB/ALGAASSB DOUBLE-HETEROSTRUCTURE LASERS EMITTING NEAR 2.1 MU-M [J].

BARANOV, AN ;

FOUILLANT, C ;

GRUNBERG, P ;

LAZZARI, JL ;

JOULLIE, A .

APPLIED PHYSICS LETTERS, 1994, 65 (05) :616-617

[2] HIGH-POWER GAINASSB-ALGAASSB MULTIPLE-QUANTUM-WELL DIODE-LASERS EMITTING AT 1.9 MU-M [J].

CHOI, HK ;

TURNER, GW ;

EGLASH, SJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (01) :7-9

[3] LOW-THRESHOLD CONTINUOUS OPERATION OF INGAAS/INGAASP QUANTUM-WELL LASERS AT SIMILAR-TO-2.0-MU-M [J].

FOROUHAR, S ;

KEO, S ;

LARSSON, A ;

KSENDZOV, A ;

TEMKIN, H .

ELECTRONICS LETTERS, 1993, 29 (07) :574-576

[4] INGAAS/INGAASP/INP STRAINED-LAYER QUANTUM-WELL LASERS AT SIMILAR-TO-2-MU-M [J].

FOROUHAR, S ;

KSENDZOV, A ;

LARSSON, A ;

TEMKIN, H .

ELECTRONICS LETTERS, 1992, 28 (15) :1431-1432

[5] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119

[6] HIGH-POWER 2.0-MU-M INGAASP LASER-DIODES [J].

MAJOR, JS ;

NAM, DW ;

OSINSKI, JS ;

WELCH, DF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) :594-596

[7] 1.95-MU-M STRAINED INGAAS-INGAASP-INP DISTRIBUTED-FEEDBACK QUANTUM-WELL LASERS [J].

MARTINELLI, RU ;

MENNA, RJ ;

OLSEN, GH ;

VERMAAK, JS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (12) :1415-1417

[8] TEMPERATURE-DEPENDENCE OF 2-MU-M STRAINED-QUANTUM-WELL INGAAS/INGAASP/INP DIODE-LASERS [J].

MARTINELLI, RU ;

MENNA, RJ ;

TRIANO, A ;

HARVEY, MG ;

OLSEN, GH .

ELECTRONICS LETTERS, 1994, 30 (04) :324-326

[9] STRAINED QUATERNARY QUANTUM-WELL LASERS FOR HIGH-TEMPERATURE OPERATION [J].

TEMKIN, H ;

COBLENTZ, D ;

LOGAN, RA ;

VANDENBERG, JM ;

YADVISH, RD ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1993, 63 (17) :2321-2323