HIGH-POWER 2.0-MU-M INGAASP LASER-DIODES

被引：35

作者：

MAJOR, JS

NAM, DW

OSINSKI, JS

WELCH, DF

机构：

[1] Spectra Diode Laboratories, San Jose

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 06期

关键词：

High power lasers - Laser diodes - Semiconducting indium compounds - Semiconductor diodes - Semiconductor quantum wells;

D O I：

10.1109/68.219679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on strained-layer InGaAs/InGaAsP double-quantum-well laser diodes operating at 2.0 mum. The total external efficiency and maximum power achieved is 55% and 1.6 W CW, respectively, from a 200 mum gain-guided laser diode. Measurements on gain-guided broad area devices yield an internal efficiency of 0.73 with a distributed loss coefficient, alpha, of 7.5 cm-1. The measured threshold current density is 300 A/cm 2 for a 2 mm long broad area device operated continuous-wave at 25-degrees-C.

引用

页码：594 / 596

页数：3

共 7 条

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