HIGH-TEMPERATURE OPERATION OF GAINASSB/ALGAASSB DOUBLE-HETEROSTRUCTURE LASERS EMITTING NEAR 2.1 MU-M

被引：17

作者：

BARANOV, AN

FOUILLANT, C

GRUNBERG, P

LAZZARI, JL

JOULLIE, A

机构：

[1] Equipe de Microoptoélectronique de Montpellier (EM2), URA CNRS 392, Sciences et Techniques du Languedoc

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.112249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mesa-stripe injection lasers have been prepared from liquid phase epitaxial Ga0.881n0.12As0.10Sb0.90/Al0.47Ga0.53As0.04Sb0.96 double heterostructures having an active zone of n-type conductivity. These laser diodes could operate pulsed at heatsink temperatures up to 120-degrees-C, and showed high characteristic temperature near ambient (T0 almost-equal-to 110 K), comparable with theoretical value.

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页码：616 / 617

页数：2

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