ANALYSIS OF THRESHOLD CURRENT-DENSITY IN 2.2-MU-M GAINASSB/GAALASSB-GASB DH LASERS

被引：7

作者：

BROSSON, P

BENOIT, J

JOULLIE, A

SERMAGE, B

机构：

[1] UNIV MONTPELLIER 2,CNRS,UA 392,EM2,F-34060 MONTPELLIER,FRANCE

[2] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 08期

关键词：

D O I：

10.1049/el:19870303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：417 / 419

页数：3

共 8 条

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[2] REDUCTION OF THRESHOLD CURRENT-DENSITY OF 2.2-MU-M GAINASSB/ALGAASSB INJECTION-LASERS [J].

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[3] ROOM-TEMPERATURE OPERATION OF INGAASSB/ALGASB DOUBLE HETEROSTRUCTURE LASERS NEAR 2.2 MU-M PREPARED BY MOLECULAR-BEAM EPITAXY [J].

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[4] 1.5-MU-M LASER WITH HIGH EXTERNAL QUANTUM EFFICIENCY AND CONTROLLED EMISSION WAVELENGTH [J].

FERNIER, B ;

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BENOIT, J .

IEE PROCEEDINGS-J OPTOELECTRONICS, 1987, 134 (01) :27-34

[5]

JOULLIE A, 1985, 2 INT TECH S OPT EL, V587, P46

[6] COMPARISON OF AUGER RECOMBINATION IN GAINAS-ALINAS MULTIPLE QUANTUM-WELL STRUCTURE AND IN BULK GAINAS [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) :774-780

[7]

SRIVASTAVA AK, 1986, 10TH IEEE INT SEM LA, P218

[8]

SUGIMURA A, 1982, IEEE J QUANTUM ELECT, V18, P352, DOI 10.1109/JQE.1982.1071543

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