1.5-MU-M LASER WITH HIGH EXTERNAL QUANTUM EFFICIENCY AND CONTROLLED EMISSION WAVELENGTH

被引：10

作者：

FERNIER, B

BROSSON, P

JICQUEL, JP

BENOIT, J

机构：

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1987年 / 134卷 / 01期

关键词：

D O I：

10.1049/ip-j.1987.0007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：27 / 34

页数：8

共 29 条

[1] TEMPERATURE-DEPENDENCE OF THE LASING THRESHOLD CURRENT OF DOUBLE HETEROSTRUCTURE INJECTION-LASERS DUE TO DRIFT CURRENT LOSS [J].

ANTHONY, PJ ;

SCHUMAKER, NE .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :5038-5040

[2]

ARTIGUE C, 1985, 1985 P OPT FIB SOURC, V587, P33

[3] THE EFFECTS OF LOSS AND NONRADIATIVE RECOMBINATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN 1.5-1.6-MU-M GALNASP/INP LASERS [J].

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :917-923

[4] THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS [J].

ASADA, M ;

ADAMS, AR ;

STUBKJAER, KE ;

SUEMATSU, Y ;

ITAYA, Y ;

ARAI, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :611-619

[5] MEASUREMENT OF SPONTANEOUS EMISSION EFFICIENCY AND NONRADIATIVE RECOMBINATIONS IN 1.58-MU-M WAVELENGTH GAINASP-INP CRYSTALS [J].

ASADA, M ;

SUEMATSU, Y .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :353-355

[6] DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS [J].

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) :434-442

[7]

Benoit J., 1983, 9th European Conference on Optical Communication, P35

[8] REFRACTIVE-INDEX OF IN1-XGAXASYP1-Y LAYERS AND INP IN THE TRANSPARENT WAVELENGTH REGION [J].

BROBERG, B ;

LINDGREN, S .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (09) :3376-3381

[9]

BROSSON P, 1985, 7TH EUR WORKSH INJ L

[10] EFFECTIVE PHASE AND GROUP INDEXES FOR IN1-XGAXP1-YASY/INP WAVEGUIDE STRUCTURES [J].

BURKHARD, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :503-508

← 1 2 3 →