1.95-MU-M STRAINED INGAAS-INGAASP-INP DISTRIBUTED-FEEDBACK QUANTUM-WELL LASERS

被引：22

作者：

MARTINELLI, RU ^{[1
]}

MENNA, RJ ^{[1
]}

OLSEN, GH ^{[1
]}

VERMAAK, JS ^{[1
]}

机构：

[1] SENSORS UNLTD INC,PRINCETON,NJ 08540

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 12期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/68.392226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Distributed-feedback emission from strained InGaAs-InGaAsP-InP quantum well lasers has been examined over a temperature range of 130 K to 300 K, Continuous single-mode output from 190 to 300 K with a side-mode-suppression ratio of about 20 dB was observed, The wavelength was 1.95 mu m at 273 K and tuned at a rate of 0.13 nm/K, The current-tuning rate was 0.0043 mn/mA (-340 MHz/mA) at 273 and 283 K.

引用

收藏

页码：1415 / 1417

页数：3

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