TEMPERATURE-DEPENDENCE OF 2-MU-M STRAINED-QUANTUM-WELL INGAAS/INGAASP/INP DIODE-LASERS

被引：13

作者：

MARTINELLI, RU ^{[1
]}

MENNA, RJ ^{[1
]}

TRIANO, A ^{[1
]}

HARVEY, MG ^{[1
]}

OLSEN, GH ^{[1
]}

机构：

[1] SENSORS UNLIMITED INC,PRINCETON,NJ 08540

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 04期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19940222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained multiquantum-well InGaAs lasers had CW thresholds near 50 mA at 2 mum at 312K. Abrupt decreases in characteristic temperatures (T(o)) occurred at 250 K for threshold current and 273 K for external quantum efficiency, indicating a highly temperature sensitive nonradiative recombination mechanism.

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页码：324 / 326

页数：3

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