LONG-WAVELENGTH STRAINED-LAYER INAS/GAINAS SINGLE-QUANTUM-WELL LASER GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATE

被引：13

作者：

TOURNIE, E

GRUNBERG, P

FOUILLANT, C

KADRET, S

BOISSIER, G

BARANOV, A

JOULLIE, A

GAUMONTGOARIN, E

PLOOG, KH

机构：

[1] UNIV MONTPELLIER,CNRS,URA 392,EQUIPE MICROOPTOELECTR MONTPELLIER,F-34095 MONTPELLIER 5,FRANCE

[2] ALCATEL ALSTHOM RECH,F-91460 MARCOUSSIS,FRANCE

[3] PAUL DRUDE INST FESTKORPERELEKTR,O-1086 BERLIN,GERMANY

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 14期

关键词：

EPITAXY AND EPITAXIAL GROWTH; LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser emission is reported for the first time from a 10 monolayer-wide highly strained (3.2%) InAs single quantum well confined by Ga0.47In0.53As layers. At 80 K the emission spectrum of broad-area laser diodes is centred at 1.836 mum, the threshold current-density is approximately 500 A/cm2 and the characteristic temperature is T0 congruent-to 30 K. CW operation is achieved up to 110 K with narrow-stripe devices but at shorter wave-length, due to increased losses and filling of the quantum-well energy levels.

引用

页码：1255 / 1257

页数：3

共 9 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS
ADAMS, AR
[J]. ELECTRONICS LETTERS, 1986, 22 (05) : 249 - 250
[2] 1.5-LESS-THAN-LAMBDA-LESS-THAN-1.7 MU-M STRAINED MULTIQUANTUM WELL INGAAS/INGAASP DIODE-LASERS
BOUR, DP
MARTINELLI, RU
ENSTROM, RE
STEWART, TR
DIGIUSEPPE, NG
HAWRYLO, FZ
COOPER, DB
[J]. ELECTRONICS LETTERS, 1992, 28 (01) : 37 - 39
[3] FOROUHAR S, 1992, 13TH P IEEE INT SEM
[4] SPECTRAL DEPENDENCE OF DIFFERENTIAL GAIN, MODE SHIFT, AND LINEWIDTH ENHANCEMENT FACTOR IN A INGAAS-GAAS STRAINED-LAYER SINGLE-QUANTUM-WELL LASER OPERATED UNDER HIGH-INJECTION CONDITIONS
RAGHURAMAN, R
YU, N
ENGELMANN, R
LEE, H
SHIEH, CL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (01) : 69 - 75
[5] ANOMALOUS DEPENDENCE OF THRESHOLD CURRENT ON STRIPE WIDTH IN GAIN-GUIDED STRAINED-LAYER INGAAS GAAS QUANTUM WELL LASERS
SHIEH, C
MANTZ, J
LEE, H
ACKLEY, D
ENGELMANN, R
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (25) : 2521 - 2523
[6] THIJS PJA, 1992, 13TH P IEEE INT SEM
[7] INAS/GA0.47IN0.53AS QUANTUM-WELLS - A NEW III-V MATERIALS SYSTEM FOR LIGHT-EMISSION IN THE MIDINFRARED WAVELENGTH RANGE
TOURNIE, E
PLOOG, KH
ALIBERT, C
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (23) : 2808 - 2810
[8] VIRTUAL-SURFACTANT EPITAXY OF STRAINED INAS AL0.48IN0.52AS QUANTUM-WELLS
TOURNIE, E
PLOOG, KH
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (08) : 858 - 860
[9] LOW-DENSITY BAND-FILLING IN STRAINED INAS QUANTUM-WELLS
TOURNIE, E
BRANDT, O
PLOOG, KH
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (02): : 109 - 112

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