1.5-LESS-THAN-LAMBDA-LESS-THAN-1.7 MU-M STRAINED MULTIQUANTUM WELL INGAAS/INGAASP DIODE-LASERS

被引：9

作者：

BOUR, DP

MARTINELLI, RU

ENSTROM, RE

STEWART, TR

DIGIUSEPPE, NG

HAWRYLO, FZ

COOPER, DB

机构：

[1] DAVID SARNOFF RES CTR,PRINCETON,NJ 08543

[2] SRI INT,MENLO PK,CA 94025

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 01期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The long wavelength limitations of strained In0.7Ga0.3As/InGaAsP four-quantum well (QW) lasers are investigated. For this confining structure and QW composition, wavelengths range from 1.52 to 1.72-mu-m for QW thicknesses between 33 and 70 angstrom, and there is an optimum QW thickness of approximately 40 angstrom.

引用

页码：37 / 39

页数：3

共 6 条

[1] GRADED BARRIER SINGLE QUANTUM WELL LASERS - THEORY AND EXPERIMENT [J].