LONG-WAVELENGTH HIGH-EFFICIENCY LOW-THRESHOLD INGAASP/INP MQW LASERS WITH COMPRESSIVE STRAIN

被引：15

作者：

DAVIES, M

DION, M

HOUGHTON, DC

SEDIVY, JZ

VIGNERON, CM

机构：

[1] Solid State Optoelectronics Consortium, Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, K1A OR6, Montreal Road

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 21期

关键词：

SEMICONDUCTOR LASERS; LASER DIODES;

D O I：

10.1049/el:19921285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broad-area MQW laser diodes using compressively strained (1.3%) InGaAsP wells are shown to have low threshold current density (= 460 A cm-2) at lambda = 1.75 mum. Ridge wave-guide lasers fabricated from the same material show low threshold currents, typically 20 mA with a differential efficiency of 23% per facet. These results constitute the best device performance to date for the InGaAsP/InP system in the 1.6-2.2 mum-wavelength region.

引用

页码：2004 / 2006

页数：3

共 6 条

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