2.0-mu m single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers

被引：45

作者：

Oishi, M

Yamamoto, M

Kasaya, K

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 04期

关键词：

distributed feedback lasers; quantum well;

D O I：

10.1109/68.559378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Distributed-feedback (DFB) buried-heterostructure (BH) lasers with quantum-wed active region emitting at 2.0 mu m have been fabricated and characterized, The lasers with four wells showed the performance of practical use: the threshold current as low as 15 mA for 600-mu m-long devices and CW single-mode output up to 5 mW at 2.03 mu m under operation current of 100 mA were observed, The current- and temperature-tuning rates of DFB mode wavelength are 0.004 mm/mA and 0.125 nm/K, respectively.

引用

收藏

页码：431 / 433

页数：3

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