Record high characteristic temperature (To = 122K) of 1.55μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier

被引：43

作者：

Ohnoki, N ^{[1
]}

Okazaki, G ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 01期

关键词：

D O I：

10.1049/el:19990031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A record high characteristic temperature of 122K (at 25-85 degrees C) has been achieved in 1.55 mu m strain-compensated AlGaInAs/AlGaInAs MQW lasers. A superlattice AlAs/AlInAs multiquantum barrier was used in the first successful realisation of long wavelength lasers. The threshold current density of the 50 mu m-wide broad area 310 mu m-long laser with cleaved facets is 1.1 kA/cm(2) at 2 degrees C. The slope efficiency decrease was only 9.5% from 25 to 85 degrees C.

引用

页码：51 / 52

页数：2

共 6 条

[1] ELECTRON REFLECTANCE OF MULTIQUANTUM BARRIER (MQB) [J].

IGA, K ;

UENOHARA, H ;

KOYAMA, F .

ELECTRONICS LETTERS, 1986, 22 (19) :1008-1010

[2] Highly uniform characteristics 12-element 1.5μm strain-compensated AlGaInAs/InP laser arrays with low threshold current and high characteristic temperature [J].

Lin, CC ;

Liu, KS ;

Wu, MC ;

Shiao, HP .

ELECTRONICS LETTERS, 1998, 34 (02) :186-187

[3] Proposal and demonstration of AlAs-oxide confinement structure for InP-based long wavelength lasers [J].

Ohnoki, N ;

Mukaihara, T ;

Hatori, N ;

Mizutani, A ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A) :148-149

[4] GaInAs/AlGaInAs semiconductor lasers with AlAs oxide current confinement structure [J].

Ohnoki, N ;

Hatori, N ;

Mizutani, A ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1896-1899

[5]

OHNOKI N, 1997, P LEOS 97, V2, P423

[6] HIGH-PERFORMANCE UNCOOLED 1.3-MU-M ALXGAYIN1-X-YAS/INP STRAINED-LAYER QUANTUM-WELL LASERS FOR SUBSCRIBER LOOP APPLICATIONS [J].

ZAH, CE ;

BHAT, R ;

PATHAK, BN ;

FAVIRE, F ;

LIN, W ;

WANG, MC ;

ANDREADAKIS, NC ;

HWANG, DM ;

KOZA, MA ;

LEE, TP ;

WANG, Z ;

DARBY, D ;

FLANDERS, D ;

HSIEH, JJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :511-523

← 1 →