GaInAs/AlGaInAs semiconductor lasers with AlAs oxide current confinement structure

An AlAs oxide current confinement structure based on an InP substrate has been demonstrated for the first time to realize low threshold long wavelength surface emitting lasers. The oxidized width is confirmed to be well controllable by choosing suitable oxidation time and temperature. We fabricated an metalorganic chemical vapor deposition (MOCVD) grown 1.65-mu m wavelength GaInAs/AlGaInAs multiple quantum well (MQW) edge emitting laser with the AlAs-oxide confinement structure of 3 mu m-wide and 15 mu m-wide windows. A 3 mu m-wide window oxidized laser having uncoated facets exhibits a threshold of 51 mA for device with a 800-mu m-long cavity. We have obtained a threshold current density of 1.3 kA/cm(2) for 3 mu m-wide window devices. The results show a potential application of the proposed structure for low threshold long-wavelength surface emitting lasers.