Proposal and demonstration of AlAs-oxide confinement structure for InP-based long wavelength lasers

被引：8

作者：

Ohnoki, N

Mukaihara, T

Hatori, N

Mizutani, A

Koyama, F

Iga, K

机构：

[1] Prec. and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama 226

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 1A期

关键词：

AlGaInAs/InP system; AlAs oxide; current confinement; long wavelength lasers; VCSELs;

D O I：

10.1143/JJAP.36.148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated an AlAs oxidation process for current and light confinement in the AlGaInAs/InP system for the first time. A lattice-mismatched 200-Angstrom-thick AlAs layer grown on an InP substrate by metalorganic chemical vapor deposition (MOCVD) was selectively oxidized. The temperature dependence of the oxidation rate was examined. The oxidized AlAs showed good electric isolation characteristics for lateral current confinement. The proposed AlAs-oxide confinement structure formed on an InP substrate may facilitate fabrication and threshold reduction of long wavelength lasers including vertical-cavity surface-emitting lasers.

引用

页码：148 / 149

页数：2

共 13 条

[1]

BISSESSUR H, 1996, MW9634 IEICE, P13

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