Highly uniform characteristics 12-element 1.5μm strain-compensated AlGaInAs/InP laser arrays with low threshold current and high characteristic temperature

被引：9

作者：

Lin, CC ^{[1
]}

Liu, KS

Wu, MC

Shiao, HP

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Elect Engn Res Inst, Hsinchu 300, Taiwan

[3] Chunghwa Telecom Co Ltd, Telecommun Labs, Chungli 320, Taiwan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 02期

关键词：

D O I：

10.1049/el:19980211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly uniform characteristic 12-element monolithic AlGaInAs/InP 1.5 mu m strain-compensated multiquantum well ridge laser arrays with low threshold current and high characteristic temperature have been achieved. The array element exhibits a threshold current of 5.4mA and a characteristic temperature of 90 K. Excellent uniformity, with standard deviations of 0.14 mA, 0.007W/A, and 1.13nm for threshold current, slope efficiency and lasing wavelength, respectively, were obtained.

引用

页码：186 / 187

页数：2

共 6 条

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