VERY LOW THRESHOLD CURRENT-DENSITY 1.5 MU-M GAINAS/ALGAINAS GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE STRAINED QUANTUM-WELL LASER-DIODES GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：39

作者：

KASUKAWA, A

BHAT, R

ZAH, CE

KOZA, MA

LEE, TP

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 20期

关键词：

D O I：

10.1063/1.105982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very low threshold current densities of 200 and 400 A/cm2 were obtained in 1.5-mu-m GaInAs/AlGaInAs tensile and compressive strained-layer quantum well laser diodes (SL-QW LDs), grown by organometallic chemical vapor deposition, with continuously graded-index separate-confinement-heterostructure. The differential quantum efficiency of SL-QW LDs showed less sensitive to temperature in contrast to that of a lattice matched QW LD. This is attributed to the decrease of intervalence band absorption due to the strain-induced reduction in the valence band density of state. The polarization of output power for a tensile SL-QW LD showed transverse magnetic (TM) mode, while that for a lattice matched and a compressive SL-QW LDs showed transverse electric (TE) mode.

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页码：2486 / 2488

页数：3

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