LOW THRESHOLD CURRENT-DENSITY 1.5 MU-M GAINAS/AIGAINAS GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE QUANTUM-WELL LASER-DIODES GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：15

作者：

KASUKAWA, A

BHAT, R

ZAH, CE

SCHWARZ, SA

HWANG, DM

KOZA, MA

LEE, TP

机构：

[1] Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama

[2] Bell Communications Research, 331 Newman Springs Road Red Bank

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 12期

关键词：

SEMICONDUCTOR LASERS; DIODES;

D O I：

10.1049/el:19910660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low threshold current density of 640 A/cm2 was obtained in a 1.5-mu-m GaInAs/AlGaInAs multiple quantum well laser diode, grown by metal organic chemical vapour deposition, with continuously graded-index separate-confinement-heterostructure. An internal waveguide loss of 14 cm-1 and internal quantum efficiency of 59% were obtained, which are comparable to those of GaInAs/GaInAsP quantum well laser diodes.

引用

收藏

页码：1063 / 1065

页数：3

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