Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots -: art. no. 041907

被引：132

作者：

Kowalik, K

Krebs, O

Lemaître, A

Laurent, S

Senellart, P

Voisin, P

Gaj, JA

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 04期

关键词：

D O I：

10.1063/1.1855409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of an in-plane electric field on the optical properties of single quantum dots is investigated. On a sample containing a plane of InAs/GaAs dots, micrometer-size electro-optical structures were produced in order to apply an external electric field in the dot plane. A large decrease of the anisotropic exchange splitting, correlated with the in-plane Stark shift, is observed. (C) 2005 American Institute of Physics.

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页码：041907 / 1

页数：3

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