Pseudopotential calculation of the excitonic fine structure of million-atom self-assembled In1-xGaxAs/GaAs quantum dots -: art. no. 161306

被引：302

作者：

Bester, G ^{[1
]}

Nair, S

Zunger, A

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Univ Toronto, ECAN, Toronto, ON M5S 3E3, Canada

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.67.161306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The atomistic pseudopotential method is used to accurately predict the electron-hole exchange-induced fine structure (FS) and polarization anisotropy in million-atom In1-xGaxAs/GaAs quantum dots of various shapes and compositions. The origin of the FS splittings is clarified using a simple model where the effects of atomistic symmetry and spin-orbit interaction are separately evident. Remarkably, polarization anisotropy and FS splittings are shown to occur, even in a cylindrically symmetric dot. Furthermore, "dark excitons" are predicted to be partially allowed. Trends in splittings among different shapes and compositions are revealed.

引用

页数：4

共 19 条

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Bastard G., 1988, WAVE MECH APPL SEMIC

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