Low leakage TiO2 gate insulator formed by ultrathin TiN deposition and low-temperature oxidation

被引：4

作者：

Matsuo, K ^{[1
]}

Nakajima, K ^{[1
]}

Omoto, S ^{[1
]}

Nakamura, S ^{[1
]}

Yagishita, A ^{[1
]}

Minamihaba, G ^{[1
]}

Yano, H ^{[1
]}

Suguro, K ^{[1
]}

机构：

[1] Toshiba Corp, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 10期

关键词：

TiO2; TiN; oxidation; gate insulator; high-k; MOS capacitors; MOSFETs;

D O I：

10.1143/JJAP.39.5794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new method of forming TiO2 gate insulators is proposed. It was found that ultrathin TiN deposition on ultrathin SiO2 and low-temperature thermal oxidation resulted in smaller TiO2 grains surrounded by amorphous boundaries. The gate leakage current was effectively reduced by applying ultrathin TiO2/SiO2 stacked insulators to metal-oxide-semiconductor (MOS) capacitors and Damascene gate metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with good characteristics were successfully fabricated.

引用

页码：5794 / 5799

页数：6

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