Scanning near-field optical microscopy in the near-infrared region using light emitting cantilever probes

被引：23

作者：

Heisig, S ^{[1
]}

Rudow, O ^{[1
]}

Oesterschulze, E ^{[1
]}

机构：

[1] Univ Gesamthsch Kassel, Inst Tech Phys, D-34109 Kassel, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 08期

关键词：

D O I：

10.1063/1.1289261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an application of an active emitting cantilever probe for scanning near-field optical microscopy and scanning force microscopy. A vertical cavity surface emitting laser (VCSEL) integrated in a galliumarsenide (GaAs) cantilever serves as a light source at 980 nm emission wavelength that is below the band gap energy of the GaAs substrate material. The VCSEL of 8 mu m diameter is centered with respect to the metalized GaAs tip and illuminates a small near-field aperture at its apex. Aperture fabrication is accomplished by a proper thermal metal evaporation process. Optical measurements on a Fischer projection pattern revealed an edge resolution of about 80 nm. (C) 2000 American Institute of Physics. [S0003-6951(00)00434-4].

引用

页码：1071 / 1073

页数：3

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