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Influence of the step covering on fatigue phenomenon for polycrystalline silicon micro-electro-mechanical-systems (MEMS)

被引：8
作者：
Millet, O
Legrand, B
Collard, D
Buchaillot, L
机构：
[1] IEMN, CNRS, UMR 8520, Dept ISEN, F-59652 Villeneuve Dascq, France
[2] Univ Tokyo, Inst Ind Sci, CIRMM, IIS,CNRS,Meguro Ku, Tokyo 1538505, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 11B期
关键词：
step covering; polycrystalline silicon; fatigue; MEMS; AFM; in situ test; FEM analysis;
D O I：
10.1143/JJAP.41.L1339
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper reports results on the reliability of polycrystalline silicon structures, particularly the influence of step covering on fatigue during operation. In situ test benches have been designed and fabricated allowing the application of elementary solicitations (bending and torsion) to representative samples. These devices are useful to study the influence of step covering on fatigue phenomenon. Fatigue tests have been performed in a high vacuum chamber (10(-6) Torr). Characterizations focused on the determination of the first natural frequency versus the number of functioning cycles, and the surface evolution of polycrystalline silicon via in situ atomic force microscopy examination. Moreover, a theoretical analysis using Finite Element Method has been performed.
引用
收藏
页码：L1339 / L1341
页数：3
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