The use of analytical peak profile functions to fit diffraction data of planar faulted layer crystals

被引：11

作者：

Estevez-Rams, E

Penton, A

Martinez-Garcia, J

Fuess, H

机构：

[1] Univ Havana, Inst Mat & Reagents, IMRE, Havana 10400 C, Cuba

[2] Univ Havana, Fac Phys, IMRE, Havana 10400 C, Cuba

[3] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2005年 / 40卷 / 1-2期

关键词：

XRD pattern; peak profile functions; stacking faults;

D O I：

10.1002/crat.200410320

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The implication of the use of particular peak profile functions in the fit of diffraction data on the nature and density of stacking faults in layered solids is studied. Common type of profile functions are studied: Gauss, Lorentz, pseudoVoigt and Pearson VII. An additional peak profile is introduced. For each profile function the decaying term of the probability correlation function is determined and the expression for the correlation length is deduced. The form of the asymmetric component of each profile is also reported. Experimental data is fitted using each profile and the results are discussed.

引用

页码：166 / 176

页数：11

共 23 条

[21] X-ray diffraction analysis of stacking and twin faults in f.c.c. metals: a revision and allowance for texture and non-uniform fault probabilities [J].