Composition-density and refractive index relations in PECVD silicon oxynitrides thin films

被引：17

作者：

Viard, J

Berjoan, R

Durand, J

机构：

[1] UMII ENSC, UMR 5635 CNRS, Lab Mat & Procedes Membranaires, F-35053 Montpellier, France

[2] Inst Sci & Genie Mat & Procedes, UPR 8521 CNRS, F-66120 Font Romeu, France

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1997年 / 17卷 / 15-16期

关键词：

OPTICAL-PROPERTIES; PLASMA;

D O I：

10.1016/S0955-2219(97)00082-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiOxNy thin films have been prepared by the Plasma Enhanced Chemical Vapour Deposition (PECVD). From the information acquired by XPS for the composition, ellipsometry for the refractive index and grazing X-rays reflectometry for the density, it is possible to establish a relation between these three characteristics of the layer from the Bruggeman and Clausius-Mossoti equations. Published by Elsevier Science Limited.

引用

页码：2001 / 2005

页数：5

共 19 条

[1] SILICON OXYNITRIDE FROM MICROWAVE PLASMA - FABRICATION AND CHARACTERIZATION [J].