400mW continuous-wave diffraction limited flared unstable resonator laser diode at 635nm

被引：14

作者：

Lu, B ^{[1
]}

Osinski, JS ^{[1
]}

Lang, RJ ^{[1
]}

机构：

[1] Spectra Diode Labs, San Jose, CA 95134 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 19期

关键词：

semiconductor junction lasers; resonators;

D O I：

10.1049/el:19971115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

400 mw of continuous-wave (CW) diffraction-limited power is demonstrated for the first time from a flared unstable resonator semiconductor laser ar a wavelength of 635nm. More than 75% of the total power is contained in the central lobe of the far field.

引用

页码：1633 / 1634

页数：2

共 5 条

[1] NUMERICAL MODELING OF THE SPATIAL AND SPECTER-TEMPORAL BEHAVIOR OF WIDE-APERTURE UNSTABLE RESONATOR SEMICONDUCTOR-LASERS [J].