Controlled growth of ZnS:Mn nanophosphor in porous silica matrix

被引:19
作者
Haranath, D [1 ]
Bhalla, N [1 ]
Chander, H [1 ]
Rashmi [1 ]
Kar, M [1 ]
Kishore, R [1 ]
机构
[1] Natl Phys Lab, New Delhi 110012, India
关键词
D O I
10.1063/1.1806552
中图分类号
O59 [应用物理学];
学科分类号
摘要
The development of nanophosphors of desired sizes and properties for various practical applications and its growth in quantitative amounts inside the pores of an inorganic matrix is presented. By doing so, nanophosphors get surface passivated and are stabilized against environmental attacks. Accordingly, in the present study, the growth parameters for ZnS:Mn nanophosphors were systematically studied inside a SiO2 gel matrix, which can act as a capping agent as well. The samples were prepared using the sol-gel technique, followed by annealing at different temperatures to remove the trapped fluid inside the amorphous silica cage. Two categories of samples with lower (3.11x10(-4)) and higher (1.5x10(-1)) ZnS/SiO2 molar ratios were studied. The x-ray diffraction and scanning electron microscopy observations show that upon annealing, the nanocrystals grow in size and undergo a phase transition from cubic to hexagonal at temperatures between 700 and 900 degreesC. This is one of the very few known reports published on nano hexagonal ZnS formation. The observed phase transition is possibly the combined effect of the high-temperature (similar to900 degreesC) and annealing-related compressive stress induced on the nano-ZnS by the silica cage. There has been formation of an intermediate metastable phase of the zinc silicate at annealing temperatures around 700 degreesC. The particle size distribution and emission properties were correlated using the optical absorption and photoluminescence (PL) results. The unannealed cubic nano-ZnS:Mn samples gave a broad PL, peaking at similar to585 nm, whereas the samples annealed at 900 degreesC for 5 h gave a narrow and sharp PL at similar to590 nm. This is attributed to the more efficient T-4(1)-->(6)A(1) transitions of Mn in the resultant hexagonal nano-ZnS matrix. (C) 2004 American Institute of Physics.
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收藏
页码:6700 / 6705
页数:6
相关论文
共 41 条
[1]   Semiconductor clusters, nanocrystals, and quantum dots [J].
Alivisatos, AP .
SCIENCE, 1996, 271 (5251) :933-937
[2]  
[Anonymous], 1980, Fluorescent Lamp Phosphors
[3]  
AVEN M, 1967, PHYSICS CHEM 2 6 COM, P473
[4]  
BAILAR JC, 1973, COMPREHENSIVE INORGA, P227
[5]   DOPED NANOCRYSTALS OF SEMICONDUCTORS - A NEW CLASS OF LUMINESCENT MATERIALS [J].
BHARGAVA, RN ;
GALLAGHER, D ;
WELKER, T .
JOURNAL OF LUMINESCENCE, 1994, 60-1 :275-280
[6]   Doped nanocrystalline materials - Physics and applications [J].
Bhargava, RN .
JOURNAL OF LUMINESCENCE, 1996, 70 :85-94
[7]   OPTICAL-PROPERTIES OF MANGANESE-DOPED NANOCRYSTALS OF ZNS [J].
BHARGAVA, RN ;
GALLAGHER, D ;
HONG, X ;
NURMIKKO, A .
PHYSICAL REVIEW LETTERS, 1994, 72 (03) :416-419
[8]   Long-lived Mn2+ emission in nanocrystalline ZnS:Mn2+ [J].
Bol, AA ;
Meijerink, A .
PHYSICAL REVIEW B, 1998, 58 (24) :15997-16000
[9]   Effect of Mn2+ concentration in ZnS nanoparticles on photoluminescence and electron-spin-resonance spectra [J].
Borse, PH ;
Srinivas, D ;
Shinde, RF ;
Date, SK ;
Vogel, W ;
Kulkarni, SK .
PHYSICAL REVIEW B, 1999, 60 (12) :8659-8664