Theoretical scanning tunneling microscopy images of the As vacancy on the GaAs(110) surface - Reply

被引：8

作者：

Kim, H

Chelikowsky, JR

机构：

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.79.3315

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3315 / 3315

页数：1

共 9 条

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[2] Theoretical scanning tunneling microscopy images of the As vacancy on the GaAs(110) surface - Comment [J].

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[3] Theoretical scanning tunneling microscopy images of the as vacancy on the GaAs(110) surface [J].

Kim, H ;

Chelikowsky, JR .

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[4]

KIM H, UNPUB

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[8] STABILITY AND DYNAMICS OF SURFACE VACANCIES ON GAAS(110) [J].

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[9] Structure of the As vacancies on GaAs(110) surfaces [J].

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