Spin-filtering effect of ferromagnetic semiconductor La2NiMnO6

被引：21

作者：

Hashisaka, M. ^{[1
]}

Kan, D.

Masuno, A.

Terashima, T.

Takano, M.

Mibu, K.

机构：

[1] Kyoto Univ, Res Ctr LowTemperature & Mat Sci, Uji 6110011, Japan

[2] Kyoto Univ, Inst Chem Res, Uji 6110011, Japan

[3] Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期

关键词：

magnetoresistance; spin filter; spin-dependent transport; La2NiMnO6; magnetic tunnel barrier;

D O I：

10.1016/j.jmmm.2006.11.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferromagnetic semiconductor La2NiMnO6 was used as a barrier in a tunneling junction. The junction with a ferromagnetic electrode showed magnetoresistance (MR) of -0.12% at 150K associated with the relative orientation of magnetization of the ferromagnetic layers. The result is interpreted as a spin-filtering effect, which is caused by the spin-dependent barrier height of the ferromagnetic tunneling barrier. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1975 / 1977

页数：3

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