Magnetization reversal in submicron magnetic wire studied by using giant magnetoresistance effect

被引：81

作者：

Ono, T

Miyajima, H

Shigeto, K

Shinjo, T

机构：

[1] Keio Univ, Fac Sci & Technol, Yokohama, Kanagawa 223, Japan

[2] Kyoto Univ, Inst Chem Res, Uji 611, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 09期

关键词：

D O I：

10.1063/1.120941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetization reversal phenomenon in a submicron magnetic wire with a trilayer structure consisting of NiFe(200 Angstrom)/Cu(100 Angstrom)/NiFe(50 Angstrom) was investigated by measuring the electric resistance in an external magnetic field. A giant magnetoresistance (GMR) effect of about 0.8% was observed when the magnetizations in two NiFe layers are oriented antiparallel. it is demonstrated that magnetization reversal phenomena can be very sensitively investigated by utilizing the GMR effect. (C) 1998 American Institute of Physics.

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页码：1116 / 1117

页数：2

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