Recent Progress in n-Channel Organic Thin-Film Transistors

被引：276

作者：

Wen, Yugeng ^{[1
,2
]}

Liu, Yunqi ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 12期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; HIGH-ELECTRON-MOBILITY; SELF-ASSEMBLED MONOLAYERS; GEL GATE DIELECTRICS; HIGH-PERFORMANCE; COMPLEMENTARY CIRCUITS; DIIMIDE SEMICONDUCTORS; CHARGE-TRANSPORT; CONTACT RESISTANCE; TRIFLUOROMETHYLPHENYL GROUPS;

D O I：

10.1002/adma.200901454

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Particular attention has been focused on n-channel thin-film transistors (OTFTs) during the last few years the potentially cost-effective circuitry-based applications in flexible electronics, such as flexible radio-frequency identity tags, smart labels, and simple displays, will benefit from this fast development. This article reviews recent progress in performance and molecular design of n-channel semiconductors in the past five years, and limitations and practicable solutions for n-channel OTFTs are dealt with from the viewpoint of OTFT constitution and geometry, molecular design, and thin-film growth conditions. Strategy methodology is especially highlighted with an aim to investigate basic issues in this field.

引用

页码：1331 / 1345

页数：15

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