PLASMONICS Electrifying plasmonics on silicon

被引：60

作者：

Hryciw, Aaron ^{[1
]}

Jun, Young Chul ^{[1
]}

Brongersma, Mark L. ^{[1
]}

机构：

[1] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA

来源：

NATURE MATERIALS | 2010年 / 9卷 / 01期

关键词：

WAVE-GUIDES; EMISSION;

D O I：

10.1038/nmat2598

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The realization of electrical sources of surface plasmon polaritons (SPP) using complementary metal oxide semiconductor (CMOS) technology is a significant step towards silicon-compatible nanoscale photonic devices. CMOS-compatible plasmonic emitters can play a critical part in chip-scale optical information links or allow new integrated biosensing applications. This type of design featuring two closely spaced metal films offers exciting added advantages that are vital for realizing power-efficient optical sources. The large modification of the decay rate in these plasmonic structures is primarily attributed to the small size of the SPP mode, which directly translates to a strong coupling to the SPP emitter. The radiative decay rate of excited emitters can be increased by more than an order of magnitude, because SPP emission provides an efficient electromagnetic decay pathway.

引用

页码：3 / 4

页数：2

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