Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates

被引：157

作者：

Saito, H ^{[1
]}

Nishi, K ^{[1
]}

Sugou, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Devices & Fundamental Res, Tsukuba, Ibaraki 3058501, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 03期

关键词：

D O I：

10.1063/1.1339846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs quantum dots (QDs) with a high density of 9x10(10) cm(-2) are formed on InAlGaAs layer/InP (311)B substrates. Lasers having five-period stacked InAs QD layers are operated in the ground state (lambda approximate to1.6 mum) at room temperature, and the maximal modal gain of the ground state is measured to be 20 cm(-1). We obtained a threshold current density of 380 A/cm(2) at room temperature, and observed the temperature-insensitive threshold current at temperatures from 77 to 220 K. (C) 2001 American Institute of Physics.

引用

页码：267 / 269

页数：3

共 16 条

[1]

Fafard S, 1996, APPL PHYS LETT, V68, P991, DOI 10.1063/1.116122

[2]

Fréchengues S, 1999, APPL PHYS LETT, V74, P3356, DOI 10.1063/1.123343

[3] Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures [J].

González, L ;

García, JM ;

García, R ;

Briones, F ;

Martínez-Pastor, J ;

Ballesteros, C .

APPLIED PHYSICS LETTERS, 2000, 76 (09) :1104-1106

[4] Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers [J].

Huang, XD ;

Stintz, A ;

Hains, CP ;

Liu, GT ;

Cheng, J ;

Malloy, KJ .

ELECTRONICS LETTERS, 2000, 36 (01) :41-42

[5] VISIBLE LUMINESCENCE FROM SEMICONDUCTOR QUANTUM DOTS IN LARGE ENSEMBLES [J].

LEON, R ;

FAFARD, S ;

LEONARD, D ;

MERZ, JL ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1995, 67 (04) :521-523

[6] Optical characteristics of 1.24-μm InAs quantum-dot laser diodes [J].

Lester, LF ;

Stintz, A ;

Li, H ;

Newell, TC ;

Pease, EA ;

Fuchs, BA ;

Malloy, KJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) :931-933

[7] High-density InAs nanowires realized in situ on (100) InP [J].

Li, HX ;

Wu, J ;

Wang, ZG ;

Daniels-Race, T .

APPLIED PHYSICS LETTERS, 1999, 75 (08) :1173-1175

[8] Single transverse mode operation of long wavelength (∼1.3μm) InAsGaAs quantum dot laser [J].

Maximov, MV ;

Shernyakov, YM ;

Kaiander, IN ;

Bedarev, DA ;

Kondrat'eva, EY ;

Kop'ev, PS ;

Kovsh, AR ;

Maleev, NA ;

Mikhrin, SS ;

Tsatsul'nikov, AF ;

Ustinov, VM ;

Volovik, BV ;

Zhukov, AE ;

Alferov, ZJ ;

Ledentsov, NN ;

Bimberg, D .

ELECTRONICS LETTERS, 1999, 35 (23) :2038-2039

[9] A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates [J].

Nishi, K ;

Saito, H ;

Sugou, S ;

Lee, JS .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1111-1113

[10]

NISHI K, 1998, P 10 INT C IND PHOSP

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