Galvanic displacement of BixTey thin films from sacrificial iron group thin films

被引：14

作者：

Chang, Chong Hyun ^{[1
]}

Rheem, Youngwoo ^{[1
]}

Choa, Yong-Ho ^{[2
]}

Park, Deok-Yong ^{[3
]}

Myung, Nosang V. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Chem & Environm Engn, Riverside, CA 92521 USA

[2] Hanyang Univ, Dept Fine Chem Engn, Ansan 426791, South Korea

[3] Hanbat Natl Univ, Dept Appl Mat Engn, Taejon 305719, South Korea

来源：

ELECTROCHIMICA ACTA | 2010年 / 55卷 / 03期

关键词：

Electrochemical process; Galvanic displacement; Bismuth telluride; Thin films; Thermoelectric materials; Semiconducting materials; ONE-DIMENSIONAL NANOSTRUCTURES; TELLURIUM NANOTUBES; ELECTROCHEMICAL DEPOSITION; TRIGONAL TELLURIUM; GROWTH-MECHANISM; P-TYPE; BI2TE3; NANOWIRES; SILICON; SURFACES;

D O I：

10.1016/j.electacta.2009.09.066

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

BixTey thin films synthesized by galvanic displacement were systematically investigated by observing open circuit potential (OCP), surface morphology, microstructure and film composition. Surface morphologies and crystal structures of synthesized BixTey thin films were strongly depended on the type of the sacrificial materials (i.e., nickel (Ni), cobalt (Co) and iron (Fe)). Galvanically deposited BixTey thin films from the sacrificial Ni and Co thin films exhibited Bi2Te3 intermetallic compounds and hierarchical structures with backbones and sub-branches. A linear relationship of deposited Bi content in BixTey thin films as a function of [Bi3+]/[HTeO2+] ratio (within a range of less than 0.8) in the electrolyte was also observed. Surface morphologies of BixTey thin films were altered with the film composition. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：1072 / 1080

页数：9

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