Development of a metal patterned cantilever for scanning capacitance microscopy and its application to the observation of semiconductor devices

被引：13

作者：

Yamamoto, T ^{[1
]}

Suzuki, Y ^{[1
]}

Miyashita, M ^{[1
]}

Sugimura, H ^{[1
]}

Nakagiri, N ^{[1
]}

机构：

[1] NIKON CO,OPTOMECHATRON R&D DEPT,TOKYO 140,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.589397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of scanning capacitance microscopy (SCM) strongly depends on the probe used. We have developed an original probe suitable for SCM (SCM probe), which uses a pyramid-shaped metal tip and metal lead line patterned on a silicon nitride cantilever. We installed the SCM probe on a SCM based on a commercial atomic force microscope (AFM). Differences in silicon oxide thickness and differences of dopant types and densities in a silicon substrate with a thermal oxide layer were successfully imaged by SCM simultaneously with AFM using the SCM probe. Boundaries between different dopant types and densities, which were not recognizable by AFM, were clearly observed by SCM. Signal-to-noise ratio and reproducibility were improved in the SCM images obtained with the SCM probe when compared with images obtained with a metal-coated silicon nitride cantilever. (C) 1997 American Vacuum Society. [S0734-211X(97)04604-0].

引用

页码：1547 / 1550

页数：4