Isotope shift in semiconductors with transition-metal impurities:: Experiment and theory applied to ZnO:Cu

被引:23
作者
Dahan, P [1 ]
Fleurov, V
Thurian, P
Heitz, R
Hoffmann, A
Broser, I
机构
[1] Tel Aviv Univ, Sch Phys & Astron, Raymond & Beverly Sackler Fac Exact Sci, IL-69978 Tel Aviv, Israel
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 16期
关键词
D O I
10.1103/PhysRevB.57.9690
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Isotope shifts for various lines associated with excitations of transition-metal impurities in semiconductors are considered. Special attention is paid to ZnO:Cu, for which experimental results are presented. Isotope shifts are measured for the so-called photoluminescence alpha and beta zero-phonon lines associated with excitations of bound excitons, and of the zero-phonon line associated with the intracenter Cu2+(T-2(2)-E-2) transition. These shifts appear to be negative and nearly equal. A theoretical model explaining these results is proposed, which incorporates the mode softening mechanism and the covalent swelling of the impurity d electron wave functions. It is shown that, contrary to transitions in simple neutral impurities, this mechanism works both for the excited and ground states of all processes in transition-metal impurities considered here. Using reasonable values of the parameters of the system, we are able to explain both the sign and value of the isotope shifts. [S0163-1829(98)04115-0].
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页码:9690 / 9694
页数:5
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