Characteristics of p-type nanocrystalline silicon thin films developed for window layer of solar cells

Different rf-power and chamber pressures have been used to deposit boron doped hydrogenated silicon films by the PECVD method. The optoelectronic and structural properties of the silicon films have been investigated. With the increase of power and pressure the crystallinity of the films increases while the absorption decreases. As a very thin p-layer is needed in p-i-n thin film solar cells the variation of properties with film thickness has been studied. The fraction of crystallinity and thus dark conductivity vary also with the thickness of the film. Conductivity as high as 2.46 S cm(-1) has been achieved for 400 angstrom thin film while for 3000 angstrom thick film it is 21 S cm(-1). Characterization of these films by XRD, Raman Spectroscopy, TEM and SEM indicate that the grain size, crystalline volume fraction as well as the surface morphology of p-layers depend on the deposition conditions as well as on the thickness of the film. Optical band gap varies from 2.19 eV to 2.63 eV. The thin p-type crystalline silicon film with high conductivity and wide band gap prepared under high power and pressure is suitable for application as window layer for Silicon thin film solar cells. (c) 2007 Published by Elsevier B.V.