Synthesis and characterization of thin films of WCx, produced by mixing W and C plasma streams

被引:36
作者
Monteiro, OR
Delplancke-Ogletree, MP
Lo, RY
Winand, R
Brown, I
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[2] Free Univ Brussels, Dept Met & Electrochem, B-1050 Brussels, Belgium
[3] Univ Calif Berkeley, Comp Mech Lab, Berkeley, CA 94720 USA
关键词
metal plasma; plasma immersion; diamondlike; tungsten carbide;
D O I
10.1016/S0257-8972(97)00453-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
WCx coatings have been synthesized by filtered cathodic are deposition at room temperature. Repetitively pulsed W and C plasma streams were mixed, and the duration of the pulse of each stream was used to vary the film composition. The energy of the incident ions was controlled by applying a pulsed bias voltage at the substrate, and was used for enhancing the adhesion as well as for modifying the microstructure of the film. The films with low W content (less than 20 at.%) consisted of regions of amorphous WC dispersed in an amorphous carbon matrix, At higher Ur content, nano-crystalline WC was observed. internal stresses in the as deposited films ranged between 500 and 4500 MPa, depending on the W content and the applied bias voltage. Film hardness varied between 63 GPa and 30 GPa, and strongly depended uh the W content and also on the applied bias voltage. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:220 / 225
页数:6
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