METAL PLASMA IMMERSION ION-IMPLANTATION AND DEPOSITION USING VACUUM-ARC PLASMA SOURCES

被引:130
作者
ANDERS, A
ANDERS, S
BROWN, IG
DICKINSON, MR
MACGILL, RA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词
D O I
10.1116/1.587351
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Plasma source ion implantation (PSII) with metal plasma results in a qualitatively different kind of surface modification than with gaseous plasma due to the condensable nature of the metal plasma, and a new, PSII-related technique can be defined: metal plasma immersion ion implantation and deposition (MPI). Tailored, high-quality films of any solid metal, metal alloy, or carbon (amorphous diamond) can be formed by MPI using filtered vacuum arc plasma sources, and compounds such as oxides or nitrides can be formed by adding a gas flow to the deposition. Here we describe the plasma formation at cathode spots, macroparticle filtering of the vacuum arc plasma by magnetic ducts. the underlying physics of MPI, and present some examples of MPI applications.
引用
收藏
页码:815 / 820
页数:6
相关论文
共 49 条
  • [1] AHMED NAG, 1987, ION PLATING TECHNOLO, P10
  • [2] Aksenov I. I., 1980, Soviet Physics - Technical Physics, V25, P1164
  • [3] Aksenov I. I., 1978, Fizika Plazmy, V4, P758
  • [4] AKSENOV II, 1980, ZH TEKH FIZ+, V50, P2000
  • [5] PROPERTIES OF DIAMOND-LIKE COATINGS PREPARED BY VACUUM-ARC DEPOSITION
    AKSENOV, II
    STRELNITSKIJ, VE
    [J]. SURFACE & COATINGS TECHNOLOGY, 1991, 47 (1-3) : 98 - 105
  • [6] ANDERS A, 1993, MATER RES SOC SYMP P, V314, P205, DOI 10.1557/PROC-314-205
  • [7] TIME-DEPENDENCE OF VACUUM-ARC PARAMETERS
    ANDERS, A
    ANDERS, S
    JUTTNER, B
    BROWN, IG
    [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1993, 21 (03) : 305 - 311
  • [8] ANDERS A, 1992, 15TH INTERNATIONAL SYMPOSIUM ON DISCHARGES AND ELECTRICAL INSULATION IN VACUUM, P653
  • [9] PULSED DYE-LASER DIAGNOSTICS OF VACUUM-ARC CATHODE SPOTS
    ANDERS, A
    ANDERS, S
    JUTTNER, B
    BOTTICHER, W
    LUCK, H
    SCHRODER, G
    [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1992, 20 (04) : 466 - 472
  • [10] ANDERS A, 1993, J APPL PHYS, V74, P4239