Ion fraction and energy distribution of Ti flux incident to substrate surface in RF-plasma enhanced magnetron sputtering

被引:18
作者
Fukushima, K [1 ]
Kusano, E [1 ]
Kikuchi, N [1 ]
Saito, T [1 ]
Saiki, S [1 ]
Nanto, H [1 ]
Kinbara, A [1 ]
机构
[1] Kanazawa Inst Technol, AMS R&D Ctr, Matto, Ishikawa 9240838, Japan
关键词
D O I
10.1016/S0042-207X(00)00320-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Effects of plasma conditions on ion fraction and ion energy distribution of Ti Aux have been investigated in RF-plasma enhanced magnetron sputtering. The ion Traction of Ti nux reaching to the substrate increases to > 30% with increasing the coil RF power for an Ar pressure of 1.0 Pa; while it is nearly independent of the coil RF power for Ar pressure of 0.3 Pa. The electron density and temperature measured by a single-probe method increase with increasing the coil RF power. The increase in the ion Fraction strongly correlates with the increase in electron density and temperature. This is more significant for a high Ar pressure, The peak energy of ion spectra of Ti+ Bur also increases with increasing the coil RF power in accordance with the increase in the plasma potential for a constant Ar pressure. As a result of the increase in the ion Fraction and plasma potential, the energy delivered to the substrate as kinetic energy of the Ti ions arriving to the substrate increases drastically with increasing the coil RF power. The strong dependence of ion Fraction on Ar pressure at a relatively low electron density emphasizes the role of Penning ionization mechanism in sputtered Ti ionization. (C) 2000 Elsevier Science Ltd. All rights reserved.
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收藏
页码:586 / 593
页数:8
相关论文
共 10 条
[1]   Quenching of electron temperature and electron density in ionized physical vapor deposition [J].
Dickson, M ;
Qian, F ;
Hopwood, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (02) :340-344
[2]  
HOFFMAN DW, 1989, HDB PLASMA PROCESSIN, P492
[3]   MECHANISMS FOR HIGHLY IONIZED MAGNETRON SPUTTERING [J].
HOPWOOD, J ;
QIAN, F .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) :758-765
[4]   Effect of coil-dc potential on ion energy distribution measured by an energy-resolved mass spectrometer in ionized physical vapor deposition [J].
Kusano, E ;
Saitoh, T ;
Kobayashi, T ;
Fukushima, K ;
Kikuchi, N ;
Nanto, H ;
Kinbara, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :2360-2363
[5]   Effects of Ar pressure on ion flux energy distribution and ion fraction in r.f.-plasma-assisted magnetron sputtering [J].
Kusano, E ;
Fukushima, K ;
Saitoh, T ;
Saiki, S ;
Kikuchi, N ;
Nanto, H ;
Kinbara, A .
SURFACE & COATINGS TECHNOLOGY, 1999, 120 :189-193
[6]   Effects of ionization power on ion energy distribution in ionized rf sputtering measured by an energy-resolved mass spectrometer [J].
Kusano, E ;
Kashiwagi, N ;
Kobayashi, T ;
Nanto, H ;
Kinbara, A .
SURFACE & COATINGS TECHNOLOGY, 1998, 108 (1-3) :177-181
[7]   Ion energy distribution in ionized dc sputtering measured by an energy-resolved mass spectrometer [J].
Kusano, E ;
Kobayashi, T ;
Kashiwagi, N ;
Saitoh, T ;
Saiki, S ;
Nanto, H ;
Kinbara, A .
VACUUM, 1999, 53 (1-2) :21-24
[8]  
LIBERMAN MA, 1994, PRINCIPLES PLASMA DI, pCH12
[9]  
MESSIER R, 1989, HDB PLASMA PROCESSIN, P451
[10]   METAL-ION DEPOSITION FROM IONIZED MAGNETRON SPUTTERING DISCHARGE [J].
ROSSNAGEL, SM ;
HOPWOOD, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01) :449-453