Core-Expanded Naphthalene Diimides Fused with 2-(1,3-Dithiol-2-Ylidene)Malonitrile Groups for High-Performance, Ambient-Stable, Solution-Processed n-Channel Organic Thin Film Transistors

被引：271

作者：

Gao, Xike ^{[1
]}

Di, Chong-an ^{[2
]}

Hu, Yunbin ^{[1
]}

Yang, Xiaodi ^{[3
]}

Fan, Hongyu ^{[1
]}

Zhang, Feng ^{[1
]}

Liu, Yunqi ^{[2
]}

Li, Hongxiang ^{[1
]}

Zhu, Daoben ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Organ Chem, Mat Sci Lab, Shanghai 200032, Peoples R China

[2] CAS, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[3] Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2010年 / 132卷 / 11期

关键词：

FIELD-EFFECT TRANSISTORS; HIGH-ELECTRON-MOBILITY; COMPLEMENTARY CIRCUITS; SEMICONDUCTORS; AIR; DERIVATIVES; STABILITY; COMPLEXES; POLYMER; DESIGN;

D O I：

10.1021/ja910667y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new class of n-type semiconductors for organic thin film transistors (OTFTs), based on core-expanded naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malonitrile groups, is reported. The first two representatives of these species, derived from long branched N-alkyl chains, have been successfully used as active layers for high-performance, ambient-stable, solution-processed n-channel OTFTs. Their bottom-gate top-contact devices fabricated by spin-coating methods exhibit high electron mobilities of up to 0.51 cm(2) V(-1) s(-1) with current on/off ratios of 10(5)-10(7), and small threshold voltages below 10 V under ambient conditions. As this class of n-type organic semiconductors has relatively low-lying LUMO levels and good film-formation ability, they also displayed good environmental stability even with prolonged exposure to ambient air. Both the device performance and the ambient stability are among the best for n-channel OTFTs reported to date.

引用

页码：3697 / +

页数：6

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