Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems

被引:681
作者
Choi, Ui-Min [1 ]
Blaabjerg, Frede [1 ]
Lee, Kyo-Beum [2 ]
机构
[1] Aalborg Univ, Dept Energy Technol, DK-9220 Aalborg, Denmark
[2] Ajou Univ, Dept Elect & Comp Engn, Suwon 443749, South Korea
基金
新加坡国家研究基金会;
关键词
Fault detection; fault tolerant; insulated-gate bipolar transistor (IGBT) modules; physics-of-failure (PoF); power electronics; reliability; FAULT-TOLERANT CONTROL; OPEN-SWITCH FAULT; CIRCUIT FAULTS; PWM INVERTER; DIAGNOSIS; RELIABILITY; PROTECTION; PERFORMANCE; PREDICTION; LIFETIME;
D O I
10.1109/TPEL.2014.2373390
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];
摘要
Power electronics plays an important role in a wide range of applications in order to achieve high efficiency and performance. Increasing efforts are being made to improve the reliability of power electronics systems to ensure compliance with more stringent constraints on cost, safety, and availability in different applications. This paper presents an overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability. The major failure mechanisms of IGBT modules are presented first, and methods for predicting lifetime and estimating the junction temperature of IGBT modules are then discussed. Subsequently, different methods for detecting open-and short-circuit faults are presented. Finally, fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.
引用
收藏
页码:2517 / 2533
页数:17
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