Comparison of two methods for describing the strain profiles in quantum dots

被引:397
作者
Pryor, C
Kim, J
Wang, LW
Williamson, AJ
Zunger, A
机构
[1] Univ Lund, Dept Solid State Phys, S-22100 Lund, Sweden
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1063/1.366631
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic structure of interfaces between lattice-mismatched semiconductors is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain-continuum elasticity [(CE), treated as a finite difference problem] and atomistic elasticity. While for small strain the two methods must agree, for the large strains that exist between lattice-mismatched III-V semiconductors (e.g., 7% for InAs/GaAs outside the linearity regime of CE) there are discrepancies. We compare the strain profile obtained by both approaches (including the approximation of the correct C-2 symmetry by the C-4 symmetry in the CE method) when applied to C-2-symmetric InAs pyramidal dots capped by GaAs. (C) 1998 American Institute of Physics.
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页码:2548 / 2554
页数:7
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