Characterization of vacancies in as-grown and irradiated diamonds

被引：6

作者：

Dannefaer, S ^{[1
]}

Kerr, D ^{[1
]}

机构：

[1] Univ Winnipeg, Dept Phys, Winnipeg, MB R3B 2E9, Canada

来源：

关键词：

positron; bulk diamond; defect;

D O I：

10.1016/S0925-9635(97)00271-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Three types of diamonds were investigated by means of positron annihilation and optical absorption: Ib (natural), Ib (synthetic) and IIa (natural). All of the as-grown samples contained vacancy clusters to which no optical absorption has been assigned. In Ib (nat), there was an additional contribution from monovacancies most probably in the form of 3N. V complexes. In 2-MeV electron-irradiated IIa diamonds, neutral vacancies were produced, whereas in Ib (syn), they were negatively charged. Optical measurements corroborate the charge assignment of the monovacancies. (C) 1998 Published by Elsevier Science S.A.

引用

页码：339 / 341

页数：3

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