Ferroelectricity in Strain-Free SrTiO3 Thin Films

被引:244
作者
Jang, H. W. [1 ]
Kumar, A. [2 ]
Denev, S. [2 ]
Biegalski, M. D. [3 ]
Maksymovych, P. [3 ]
Bark, C. W. [1 ]
Nelson, C. T. [4 ]
Folkman, C. M. [1 ]
Baek, S. H. [1 ]
Balke, N. [3 ]
Brooks, C. M. [2 ,5 ]
Tenne, D. A. [6 ]
Schlom, D. G. [5 ]
Chen, L. Q. [2 ]
Pan, X. Q. [4 ]
Kalinin, S. V. [3 ]
Gopalan, V. [2 ]
Eom, C. B. [1 ]
机构
[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[4] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[5] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[6] Boise State Univ, Dept Phys, Boise, ID 83725 USA
基金
美国国家科学基金会;
关键词
PHASE-TRANSITIONS; FORCE MICROSCOPY; FLUCTUATIONS; PEROVSKITE; SURFACE; BATIO3;
D O I
10.1103/PhysRevLett.104.197601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Biaxial strain is known to induce ferroelectricity in thin films of nominally nonferroelectric materials such as SrTiO3. By a direct comparison of the strained and strain-free SrTiO3 films using dielectric, ferroelectric, Raman, nonlinear optical and nanoscale piezoelectric property measurements, we conclude that all SrTiO3 films and bulk crystals are relaxor ferroelectrics, and the role of strain is to stabilize longerrange correlation of preexisting nanopolar regions, likely originating from minute amounts of unintentional Sr deficiency in nominally stoichiometric samples. These findings highlight the sensitive role of stoichiometry when exploring strain and epitaxy-induced electronic phenomena in oxide films, heterostructures, and interfaces.
引用
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页数:4
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