450 meV hole localization in GaSb/GaAs quantum dots

被引：149

作者：

Geller, M ^{[1
]}

Kapteyn, C ^{[1
]}

Müller-Kirsch, L ^{[1
]}

Heitz, R ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 16期

关键词：

D O I：

10.1063/1.1569413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic properties of self-organized GaSb quantum dots (QDs) embedded in GaAs n(+)p diodes were investigated by capacitance-voltage and deep level transient spectroscopy. The localization energy of the hole ground state is 450 meV. State filling lowers the activation energy to 150 meV for completely charged QDs containing 15 holes. The hole retention time at room temperature for a single hole per QD is extrapolated to be in the microsecond range, about five orders of magnitude longer than in In(Ga)As/GaAs QDs. Hence, we consider GaSb/GaAs to be a suitable material system for future QD memory applications which require long storage times. (C) 2003 American Institute of Physics.

引用

页码：2706 / 2708

页数：3

共 20 条

[1] Electrical characterization of InP/GaInP quantum dots by space charge spectroscopy [J].

Anand, S ;

Carlsson, N ;

Pistol, ME ;

Samuelson, L ;

Seifert, W .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3747-3755

[2]

[Anonymous], QUANTUM DOT HETEROST

[3] Electrical detection of optically induced charge storage in self-assembled InAs quantum dots [J].

Finley, JJ ;

Skalitz, M ;

Arzberger, M ;

Zrenner, A ;

Bohm, G ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2618-2620

[4] Carrier dynamics in type-II GaSb/GaAs quantum dots [J].

Hatami, F ;

Grundmann, M ;

Ledentsov, NN ;

Heinrichsdorff, F ;

Heitz, R ;

Bohrer, J ;

Bimberg, D ;

Ruvimov, SS ;

Werner, P ;

Ustinov, VM ;

Kop'ev, PS ;

Alferov, ZI .

PHYSICAL REVIEW B, 1998, 57 (08) :4635-4641

[5] RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS [J].

HATAMI, F ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BOHRER, J ;

HEINRICHSDORFF, F ;

BEER, M ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J ;

RICHTER, U ;

IVANOV, SV ;

MELTSER, BY ;

KOPEV, PS ;

ALFEROV, ZI .

APPLIED PHYSICS LETTERS, 1995, 67 (05) :656-658

[6]

Kapteyn Ch., 2001, CARRIER EMISSION ELE

[7] Electron escape from InAs quantum dots [J].

Kapteyn, CMA ;

Heinrichsdorff, F ;

Stier, O ;

Heitz, R ;

Grundmann, M ;

Zakharov, ND ;

Bimberg, D ;

Werner, P .

PHYSICAL REVIEW B, 1999, 60 (20) :14265-14268

[8] Hole and electron emission from InAs quantum dots [J].

Kapteyn, CMA ;

Lion, M ;

Heitz, R ;

Bimberg, D ;

Brunkov, PN ;

Volovik, BV ;

Konnikov, SG ;

Kovsh, AR ;

Ustinov, VM .

APPLIED PHYSICS LETTERS, 2000, 76 (12) :1573-1575

[9] Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy [J].

Kapteyn, CMA ;

Lion, M ;

Heitz, R ;

Bimberg, D ;

Miesner, C ;

Asperger, T ;

Brunner, K ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 2000, 77 (25) :4169-4171

[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

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