Microstructure and microwave dielectric properties of epitaxial SrTiO3 films on LaAlO3 substrates

被引:28
作者
Ryen, L [1 ]
Olsson, E
Madsen, LD
Wang, X
Edvardsson, CNL
Jacobsen, SN
Helmersson, U
Rudner, S
Wernlund, LD
机构
[1] Chalmers Univ Technol, Dept Expt Phys, SE-41296 Goteborg, Sweden
[2] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
[3] FOA Def Res Estab, SE-58111 Linkoping, Sweden
关键词
D O I
10.1063/1.367288
中图分类号
O59 [应用物理学];
学科分类号
摘要
Sr-deficient and stoichiometric epitaxial (001) SrTiO3 films, deposited on (110)(rhombohedral) LaAlO3 substrates by rf magnetron sputtering, have been characterized using high-resolution transmission electron microscopy. A subsequent heat treatment in oxygen had a positive influence on the dielectric properties. Sr-deficiency had a large negative impact on the microwave dielectric constant of the films. These changes were correlated to changes in lattice parameters. In ail samples, at the film/substrate interface, were misfit dislocations present. The residual elastic strain compressed the SrTiO3 unit cell in the substrate surface plane and expanded it an equal amount in the [001] direction. X-ray diffraction revealed that the tetragonal distortion, due to the mismatch strain, was concentrated to a narrow region closest to the film/substrate interface. (C) 1998 American Institute of Physics.
引用
收藏
页码:4884 / 4890
页数:7
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